Comparative Study Of Power Dissipation Of 6H

Authors

  • Ranjana prasad

Keywords:

Silicon carbide, Power electronics, High temperature Drift Region Uniform Doping

Abstract

This paper analyzes

References

B.J. Baliga, Modern Power Devices, John wiley & Sons, New York 1987.

Rich and Knight, Artificial Intellegence, 2nd ed.,Tata Mc Graw Hill I. S. K. Soderland.

G. M. Dolny, D. T. Morisette, P. M. Shenoy, M. Zafrani, J. Gladish, J. M.Woodall, J. A: Cooper, Jr., and M. R. Mellach, "Static and DynamicCharacterization of Large-Area High-Current-Density SiC Scltottky Diodes,"IEEE Device Research Conf., Charlottesville, VA, June 22

C.Raynaud, Silica films on Silicon Carbide : A review of electrical properties and device applications , Journal on Non-Crystalline Solids(2001)1-31.

R. Stout,

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Published

2011-05-14

How to Cite

prasad, R. (2011). Comparative Study Of Power Dissipation Of 6H . International Journal of Sciences: Basic and Applied Research (IJSBAR), 3(1), 1–8. Retrieved from https://gssrr.org/index.php/JournalOfBasicAndApplied/article/view/931

Issue

Vol. 3 No. 1 (2011)

Section

Articles

License

Copyright (c) 2011 International Journal of Sciences: Basic and Applied Research (IJSBAR)

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