[1]
S. Rahimi, “Effect of the Improved-Shaped Gate in HEMT Transistors Performance”, IJSBAR, vol. 45, no. 2, pp. 122–127, May 2019, Accessed: Jun. 06, 2026. [Online]. Available: https://gssrr.org/JournalOfBasicAndApplied/article/view/9959