RAHIMI, Serveh. Effect of the Improved-Shaped Gate in HEMT Transistors Performance. International Journal of Sciences: Basic and Applied Research (IJSBAR), Jordan, v. 45, n. 2, p. 122–127, 2019. Disponível em: https://gssrr.org/JournalOfBasicAndApplied/article/view/9959. Acesso em: 11 sep. 2025.