Effect of the Improved-Shaped Gate in HEMT Transistors Performance

Serveh Rahimi

Abstract


In this paper the effect of the Gate shape on the operation of HEMTS is evaluated via simulations and Two transistors with different Gate Shapes  are simulated. Simulations show that with the improved Gate-shaped (wedge-shaped), the performance of the transistor is improved. Therefore, when the Gate Voltage and Drain Voltage are increased, the curve Drain Current versus Drain voltage and Gate Voltage is also
increased, means the transistors-conductance increases.


Keywords


hemt; gate; performance; transistors.

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References


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